The following Field-Effect Transistor (FET) models are supported in IC-CAP.

Model Product Description
Keysight EEFET3, Keysight EEHEMT1, Curtice cubic and quadratic, Raytheon’s Statz Complete measurement and extraction procedure for the supported models.
Keysight Root FET, MOS and Diode Automated modeling procedure for DC and RF 3-terminal applications using interpolative spline fitting of S-parameters and DC data arrays over the device's operating range. The license also includes extraction for Keysight Root Diode and MOS models.
Angelov-GaN Accurate turn-key measurement and extraction solution for the Angelov-GaN model

 

For more information about Device Modeling software, please visit Device Modeling IC-CAP.

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