Power Device Analyzer / Curve Tracer High-power testing for Si, SiC, and GaN devices

Complete Power Device Characterization to Guarantee that Your Circuits Work the First Time

The Keysight B1506A Power Device Analyzer / Curve Tracer for Circuit Design is a complete solution that can help power electronic circuit designers maximize the value of their power electronics products by enabling them to select the correct power devices for their applications. It can evaluate all relevant device parameters under a wide range of operating conditions, including IV parameters such as breakdown voltage and on-resistance, as well as three terminal FET capacitances, gate charge, and power loss. The B1506A Power Device Analyzer/Curve Tracer for Circuit Design meets and exceeds all curve tracer capabilities.

B1506A common features

• Wide operation range up to 3 kV/1500 A
• Fully automated fast thermal test from -50 °C to +250 °C
• Automatic power device (semiconductor and component) datasheet creation
• Auto record function to prevent data loss

B1506A IV package features

• Fully automated fast IV measurement (Ron, BV, Leakage, Vth, Vsat, etc) for both package and on-wafer devices
• Narrow IV pulse widths (down to 10 μs) to prevent device self-heating for revealing actual device performance
• Oscilloscope view (Time-domain view) to monitor actual voltage/current pulsed waveforms for accurate measurement
• Scalable configuration to add CV and Qg, to expand current range from 20A to 500 A, 1500 A

B1506A full package features

• All of the IV package features
• Measure transistor input, output and reverse transfer capacitances (Ciss, Coss, Crss, Cies, Coes, Cres) and gate resistance (Rg) at 3kV for package devices
• Gate charge (Qg) curve measurement for package devices
• Power loss (conduction, driving and switching loss) calculation

The B1506A has a wide range of capabilities that help it identify substandard devices under actual circuit operating conditions, including a wide voltage and current range (3 kV and 1500 A), a wide temperature measurement range (-50°C to +250°C), fast pulsing capability, and Sub-nA level current measurement resolution. Its unique software interface presents the user with a familiar device data sheet format that makes it easy to characterize devices without going through any formal training. Integrated switching circuitry within the test fixture supports fully automated testing, with the ability to automatically change between both high voltage and high current testing as well as between IV and CV measurements.

In addition, a unique plug-in style device test fixture socket adapter eliminates cable connection and other human-related errors. The B1506A also supports the complete automation of thermal characterization. This can be accomplished either through the integrated Thermostream control or via the Thermal Plate. Since the DUT is in close proximity to the B1506A’s measurement resources, the large parasitics caused by cable extensions leading to a temperature chamber do not exist.

For this reason, oscillation-free ultra-high currents of up to 1500 A can be accurately evaluated at both low and high temperatures. The B1506A’s capabilities revolutionize power electronics circuit design by both helping to maximize end product value and accelerating product development cycles.

The prices of the IV packages (H20, H50, H70) are comparable to those of conventional curve tracers, and with the B1506A you get additional advanced features. You can also upgrade any of the B1506A IV packages (H20, H50, H70) to either increase the current range or add CV/Qg measurement capability (options H21, H51, H71).

B1506A IV Package

• B1506A-H20 20 A / 3 kV IV measurement
• B1506A-H50 500 A / 3 kV IV measurement
• B1506A-H70 1500 A / 3 kV IV measurement

B1506A Full Package

• B1506A-H21 20 A / 3 kV IV, C-V and Gate charge measurement
• B1506A-H51 500 A / 3 kV IV, C-V and Gate charge measurement
• B1506A-H71 1500 A / 3 kV IV, C-V and Gate charge measurement

• Reliable, repeatable measurement of wide-bandgap (SiC, GaN) power semiconductor dynamic characteristics.
• Characteristics measured include, turn-on, turn-off, switching, reverse recovery, gate charge, and many others.
• Sate test environment for both the DUT and the user.
• Expandable, upgradeable, modular platform enables testing of all power devices.

As an off-the-shelf measurement solution, the PD1500A delivers reliable, repeatable measurements of wide-bandgap semiconductors. The platform ensures user safety and protection of the system’s measurement hardware.

The ability to ensure repeatable DPT results is built on Keysight’s expertise in measurement science. Examples include innovations in high-frequency testing (gigahertz range), low leakage (femtoampere range), and pulsed power (1,500 A current, 10 μs resolution). As a result, Keysight is uniquely positioned to help you overcome the challenges of dynamic power-semiconductor characterization.

Included with the PD1500A are standard measurement techniques such as probe compensation, offset adjustment, de-skewing, and common mode noise rejection. These techniques are utilized within an innovative measurement topology and layout. A semi-automated calibration routine (AutoCal) that corrects for system gain and offset errors was specifically developed for this system. The system also uses de-embedding techniques to compensate for inductive parasitics in the current shunt.

JEDEC is the global leader in developing open standards and publications for the microelectronics industry. JEDEC committees provide industry leadership in developing standards for a broad range of technologies.

JEDEC Committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors
The JEDEC standards recognized the need to provide WBG standards for the power semiconductor industry. In September of 2017, the JC70 Wide Bandgap Power Electronic Conversion Semiconductor committee was formed for both GaN JC70.1 and SiC JC-70.2 Each section has three task groups, focusing on Reliability and Qualification Procedures, Datasheet Elements and Parameters, and Test and Characterization Methods.

Keysight is actively participating in developing these standards.

As JEDEC continues to define the dynamic testing of WBG devices, some standardized tests are starting to emerge. The Keysight PD1500A DPT determines these key performance parameters:

• Turn-on characteristics
• Turn-off characteristics
• Dynamic on-resistance
• Dynamic current and voltage
• Switching characteristics
• Reverse recovery
• Gate charge
• Derived output characteristics

• Reliable, repeatable measurement of wide-bandgap (SiC, GaN) power semiconductor dynamic characteristics for discreet devices and power modules.
• Characteristics measured include turn-on, turn-off, switching, reverse recovery, gate charge, and many others.
• True Pulse isolate probe for measuring a power module's high-side device.
• Solderless contact technology for repeatable, reliable results without soldering.
• Safe test environment for both the DUT and the user.
• Customizable, expandable, upgradeable, modular platform enables testing of all power devices.

As an off-the-shelf measurement solution, the PD1550A delivers reliable, repeatable measurements of wide-bandgap semiconductor power modules. The platform ensures user safety and protection of the system's measurement hardware. The ability to ensure repeatable, reliable Double Pulse Test (DPT) results is built on Keysight's 80+ years of expertise in measurement science. With the experience gained through working closely with customers and standards organizations with the PD1500A, Keysight is now helping customers overcome the challenges of the dynamic characterization of WBG power modules. Examples include innovations in high-frequency testing (gigahertz range), low leakage (femto-ampere range), and pulsed power (1,500 A current, 10 μs resolution). As a result, Keysight is uniquely positioned to help you overcome the challenges of dynamic power-semiconductor characterization.

Included with the PD1550A are standard advanced measurement techniques such as probe compensation, offset adjustment, de-skewing, and common mode noise rejection. These techniques are utilized within an innovative measurement topology and layout. A semi-automated calibration routine (AutoCal) that corrects for system gain and offset errors were specifically developed for this system. The system also uses de-embedding techniques to compensate for inductive parasitics in the current shunt. True Pulse Isolate Probe technology for accurate high-side Vgs measurements and solderless contact technology allows for repeatable reliable measurements without having to solder large contact pads.

Joint Electron Device Engineering Council (JEDEC) is the global leader in developing open standards and publications for the microelectronics industry. JEDEC committees provide industry leadership in developing standards for a broad range of technologies.

JEDEC Committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors
The JEDEC standards recognized the need to provide WBG standards for the power semiconductor industry. In September of 2017, the JC70 Wide Bandgap Power Electronic Conversion Semiconductor committee was formed for both GaN JC70.1 and SiC JC-70.2 Each section has three task groups, focusing on Reliability and Qualification Procedures, Datasheet Elements and Parameters, and Test and Characterization Methods.

Keysight is actively participating in developing these standards.

As JEDEC continues to define the dynamic testing of WBG devices, some standardized tests are starting to emerge. The Keysight PD1500A DPT determines these key performance parameters:

• Turn-on characteristics
• Turn-off characteristics
• Dynamic on-resistance
• Dynamic current and voltage
• Switching characteristics