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W8524BT IC-CAP CMC GaN RF Modeling Bundle Add-on

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W7324B PathWave IC-CAP CMC GaN RF Modeling Add-on

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The W8524 IC-CAP CMC GaN RF Modeling Bundle Add-on provides extraction flows for 2 physics-based models for GaN device modeling. Both models were recently accepted as industry-standard by the Compact Model Coalition (CMC) in 2017.

Advanced Spice Model for High Electron Mobility Transistors or ASM-HEMT Model
MIT Virtual Source GaN Model or MVSG_CMC Model

Both models have been formulated for both high-frequency (RF) and high-voltage (power electronics) applications. As physics-based models, they may lend insight to GaN process developers. For example, process engineers may learn the benefits of increased mobility or reduced contact resistance on overall power amplifier efficiency. Thus, a connection is made between circuit and system performance and foundry process improvements via physics-based device modeling parameters.

The RF GaN toolkit introduced in PathWave Device Modeling (IC-CAP) 2020 serves as an excellent starting point for the extraction of ASM-HEMT and MVSG model parameters with an easy-to-use user interface. Now, in a single platform, one can initiate measurements, bring the data into the IC-CAP platform, extract model parameters and then export the resultant model card to Advanced Design Systems (ADS) or any other simulator that can run these models. Two example flows are presented: one for the MVSG and one for the ASM-HEMT.

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